SURFACE EROSION DURING ANNEALING OF M^III X^V: F^IIB SYSTEMS AND ITS REDUCTIONNEBAUER E.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 1; PP. 233-237; ABS. GER; BIBL. 10 REF.Article

A COMPARATIVE STUDY OF ZINC TRACER DIFFUSION PROFILES IN LEC, SSD, AND CVD GAPNEBAUER E.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 1; PP. 249-254; ABS. GER; BIBL. 11 REF.Article

Some remarks on the interface displacement in the AuGeNi-GaAs systemNEBAUER, E.Physica status solidi. A. Applied research. 1990, Vol 117, Num 2, pp K111-K114, issn 0031-8965Article

DIFFUSIVITY AND SOLUBILITY OF COPPER IN LEO-GAP.SCHNEIDER M; NEBAUER E.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 46; NO 1; PP. K71-K74; BIBL. 6 REF.Article

ATTEMPTS TO MEASURE THE ELECTROMIGRATION EFFECT ON THE SYSTEM CDS: AU.NEBAUER E; QUEDNAU F.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 26; NO 1; PP. 225-236; ABS. ALLEM.; BIBL. 18 REF.Article

XRD investigations of WSiN and LaB₆ Layers on GaAsNEBAUER, E.Physica status solidi. B. Basic research. 1996, Vol 194, Num 1, pp 121-126, issn 0370-1972Article

TERNARY PHASE DIAGRAM ANALYSIS OF IMPURITY DIFFUSIVITY AND SOLUBILITY DATA ON COMPOUND SEMICONDUCTORS: THE SYSTEM GAP: GE.SCHNEIDER M; NEBAUER E.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 32; NO 1; PP. 333-344; ABS. ALLEM.; BIBL. 20 REF.Article

REGULAR SOLUTION CALCULATIONS OF TERNARY PHASE DIAGRAMS FOR GA-P-GE AND SIMILAR SYSTEMS USING ELECTRONEGATIVITY DATANEBAUER E; SCHNEIDER M.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 23; NO 2; PP. 485-493; ABS. ALLEM.; BIBL. 22 REF.Article

SOME CONCENTRATION DISTRIBUTION STUDIES OF SOLID STATE DIFFUSED GAAS_1-NP_NNEBAUER E; LANGE H; RAIDT H et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 57; NO 1; PP. 245-251; ABS. GER; BIBL. 29 REF.Article

DETERMINATION OF THE CHARGE OF MIGRATING IMPURITIES FROM ELECTRODIFFUSION PROFILES: THE SYSTEM A-AS₂SE₃:CU.NEBAUER E; SUPTITZ P; WILLERT I et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 43; NO 2; PP. 451-458; ABS. ALLEM.; BIBL. 21 REF.Article

Ge and Au profiles in GaAs produced from AuGe contacts and studied by SIMS = Untersuchung der von AuGe-Kontakten produzierten Ge- und Au-Profile in GaAs mittels SIMSNEBAUER, E; TRAPP, M.Physica status solidi. A. Applied research. 1984, Vol 84, Num 1, pp K39-K42, issn 0031-8965Article

ARE AU PROFILES WELL MEASURABLE IN N-GAAS BY ELECTROETCHINGNEBAUER E; BRINK E; JANIETZ P et al.1982; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1982-01; VOL. 69; NO 1; PP. K65-K68; BIBL. 9 REF.Article

MIGRATION OF SILVER AND GOLD IN AMORPHOUS AS₂S₃.BUROFF A; NEBAUER E; SUEPPITZ P et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 40; NO 2; PP. K195-K198; BIBL. 3 REF.Article

Interdiffusion profiles of AuGe/n-GaAs ohmic contacts studied by AESJUNG, T; NEBAUER, E.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K203-K206, issn 0031-8965Article

ARE AU PROFILES WELL MEASURABLE IN N-GAAS BY ELECTROETCHING.NEBAUER E; BRINK E; JANIETZ P et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 1; PP. K65-K68; BIBL. 9 REF.Article

Structure and stability studies on W, WSi, WSiN/GaAs systems by XRDNEBAUER, E; MERKEL, U; WÜRFL, J et al.Semiconductor science and technology. 1997, Vol 12, Num 9, pp 1072-1078, issn 0268-1242Article

Ohmic behaviour of Au/WSiN/(Au,Ge,Ni)-n-GaAs systemsMERKEL, U; NEBAUER, E; MAI, M et al.Thin solid films. 1992, Vol 217, Num 1-2, pp 108-112, issn 0040-6090Article

Ohmic AuGe contacts on n-GaAs produced by nanosecond laser pulse irradiationSANDOW, E; WESCH, W; NEBAUER, E et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp K169-K173, issn 0031-8965Article

Ohmic AuGe contacts on n-GaAs produced by nanosecond laser pulse irradiation = Ohmsche AuGe-Kontakte auf n-GaAs, hergestellt durch Bestrahlung mit Nanosekunden-LaserimpulsenSANDOW, E; NEBAUER, E; WESCH, W et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp K169-K173, issn 0031-8965Article

Annealing behaviour of Au/LaB₆/Au/Ni/Ge systems on n-GaAs studied by the SNMS techniqueNEBAUER, E; MERKEL, U; WEISSBRODT, P et al.Physica status solidi. A. Applied research. 1994, Vol 146, Num 2, pp 697-702, issn 0031-8965Article

XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systemsNEBAUER, E; ÖSTERLE, W; HILSENBECK, J et al.Semiconductor science and technology. 2002, Vol 17, Num 3, pp 249-254, issn 0268-1242Article

Preparation, transmission electron microscopy, and microanalytical investigations of metal-III-V semiconductor interfacesKLEIN, A; URBAN, I; RESSEL, P et al.Materials characterization. 1996, Vol 37, Num 2/3, pp 143-151, issn 1044-5803Article

Direct growth of GaN on (0001) sapphire by low pressure hydride vapour phase epitaxyRICHTER, E; GRAMLICH, S; KLEIN, A et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 1, pp 439-442, issn 0031-8965Conference Paper

Shallow and low-resistive metallizations to p-type indium gallium arsenide for optoelectronic applicationsRESSEL, P; WANG, L. C; HARTNAGEL, H. L et al.Recent research developments in vacuum science and technology (Vol. 2 (2000) - Part II). Recent research developments in vacuum science and technology. 2000, pp 237-266, isbn 81-86846-56-5Book Chapter

Transparent conductive ZnO:Al films by reactive co-sputtering from separate metallic Zn and Al targetsFENSKE, F; FUHS, W; NEBAUER, E et al.Thin solid films. 1999, Vol 343-4, pp 130-133, issn 0040-6090Conference Paper